Nonlinear Phenomena in Complex Systems, 1999, Vol.2, No.2, pp.6--10

NONLINEAR PHENOMENA IN COMPLEX SYSTEMS
An Interdisciplinary Journal

1999, Volume 2, Number 2, pp.6--10

Amplified Luminescence as a Source of Nonlinearity in Laser Diodes.
V.P. Gribkovskii, S.V. Voitikov, M.I. Kramar, G.I. Ryabtsev, and R. Kragler

Nonlinear properties of amplified luminescence in semiconductor bulk and quantum-well (QW) lasers have been investigated and modeled. Amplified luminescence depends strictly on carrier concentration and temperature representing by itself an additional relatively powerful source of nonlinearity that can make laser dynamics much more complicated. In general, the rate of amplified luminescence still keeps its quadratic character as that of spontaneous recombination. In QW lasers, in the vicinities of laser mode hopping the amplified luminescence exhibits local peak-like carrier dependence and may affects abruptly on a bifurcation of mode hopping with the injection level increasing.

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