NONLINEAR PHENOMENA IN COMPLEX SYSTEMS
An Interdisciplinary Journal

1999, Volume 2, Number 4, pp.41--47


Chaotic Photoconductivity.
K. G. Kyritsi, L. Gallos, A. N. Anagnostopoulos, A. Cenys, and G. L. Bleris

In modern optoelectronics, light sensors are playing a main role. The present work examines the conditions of their performance, concerning photoconductivity. The model of a n-type photosensitive semiconductor containing two localized levels in its energy gap is considered. The semiconductor is illuminated homogeneously with bandgap-light and a constant electric field is applied. Electrons are excited by the illumination from the valence- to the conduction-band and by the electric field from the localized levels to the conduction-band. Electrons are also recombining from the conduction- to the valence-band and from the conduction-band to the localized levels. Depending on the parameters of the system (i.e. generation- and recombination rates, electric field strength, capture- and reemission-coefficients of the levels, ambient temperature, etc) the semiconductor is exhibiting periodic or chaotic conductivity. Different routes to chaos were observed in this system, like period doubling, intermittency and crisis induced intermittency.

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