Nonlinear Phenomena in Complex Systems, 2002, Vol.5, No.3, pp.289-295

NONLINEAR PHENOMENA IN COMPLEX SYSTEMS
An Interdisciplinary Journal

2002, Vol.5, No.3, pp.289-295

Laser Diode Threshold in Travelling Wave Rate Equation Approach. pp.289-295
L.I.Burov, L.A.Kotomtseva, S.G.Rusov, A.G.Ryabtsev, G.I.Ryabtsev, A.S.Smal, I.N.Waraxe

New precise method for determination of laser diode threshold on the base of the analysis of carrier concentration non-uniformity along the active layer has been developed. It uses the travelling wave rate equation approach and is applicable to one- or two-dimensional stationary and non-stationary laser diode models. The laser threshold is defined as a critical point of the transition from the convex to concave type of amplified luminescence flux density distributions over a laser cavity as a function of pumping level. All numerical calculations were made for InGaAsP/InP heterostructure with a bulk active layer emitting at the 1.3 -1.55 wavelength and room temperature.
Key words: laser diode, travelling wave rate equation, threshold carrier concentration

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