Nonlinear Phenomena in Complex Systems, 2003, Vol.6, No.2, pp.607-618

NONLINEAR PHENOMENA IN COMPLEX SYSTEMS
An Interdisciplinary Journal

2003, Vol.6, No.2, pp.607-618

Equations for Coupled Diffusion of Dopant Atoms and Point Defects in Semiconductor Crystals
O.I. Velichko and A.K. Fedotov

The main trend of up-to-day electronics is decrease in the sizes of the active regions of modern integrated microcircuits and advanced optoelectronic devices. Very small sizes of doped regions make difficult direct measurements of the transport processes of dopant atoms and point defects occurring during device fabrication. This puts in the forefront importance of simulating these nonlinear processes. To solve the problem, we construct a scheme of quasichemical reactions for all species in a crystal lattice, including substitutionally dissolved dopant atoms, clusters, vacancies and self-interstitials, "dopant atom - point defect" pairs, electrons (holes), etc. We also use a formalism of nonequilibrium thermodynamics to formulate a quantitative model of transport processes and quasichemical reactions. The set of equations obtained describe evolution of a multicomponent dopant-defect system in semiconductor crystals under annealing and other heat treatments enabling one to predict electrophysical parameters of doped layers.
Key words: nonlinear system; coupled diffusion; dopant atom; point defect

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